for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 1 hmc667lp2 / 667lp2e gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz v02.1110 general description features functional diagram typical applications the hmc667lp2(e) is ideal for: ? wimax, wibro & fixed wireless ? sdars & wlan receivers ? infrastructure & repeaters ? access points ? telematics & dmb electrical speci cations, t a = +25 c parameter vdd = +3 vdc vdd = +5 vdc units min. typ. max. min. typ. max. frequency range 2300 - 2700 2300 - 2700 mhz gain 14 17.5 16 19 db gain variation over temperature 0.01 0.01 db/ c noise figure 0.9 1.2 0.75 1.1 db input return loss 10 12 db output return loss 15 14 db output power for 1 db compression (p1db) 9.5 11.5 13.5 16.5 dbm saturated output power (psat) 12.5 17 dbm output third order intercept (ip3) 22 29.5 dbm supply current (idd) 24 32 59 75 ma the hmc667lp2(e) is a gaas phemt mmic low noise ampli er that is ideal for wimax, wlan and xed wireless receivers operating between 2300 and 2700 mhz. this self-biased lna has been optimized to provide 0.75 db noise gure, 19 db gain and +29.5 dbm output ip3 from a single supply of +5v. input and output return losses are excellent and the lna requires minimal external matching and bias decoupling components. the hmc667lp2(e) can also operate from a +3v supply for lower power applications. low noise figure: 0.75 db high gain: 19 db high output ip3: +29.5 dbm single supply: +3v to +5v 6 lead 2x2mm dfn package: 4 mm 2
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss hmc667lp2 / 667lp2e v02.1110 gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz [1] vdd = 5v -25 -20 -15 -10 -5 0 5 10 15 20 25 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 vdd=5v vdd=3v frequency (ghz) response (db) s11 s21 s22 -20 -15 -10 -5 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25c +85c -40c frequency (ghz) return loss (db) -20 -15 -10 -5 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25c +85c -40c frequency (ghz) return loss (db) gain vs. temperature 12 14 16 18 20 22 24 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25c +85c -40c frequency (ghz) gain (db) vdd=5v vdd=3v p1db vs. temperature 6 8 10 12 14 16 18 20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25c +85c -40c frequency (ghz) p1db (dbm) vdd=5v vdd=3v reverse isolation vs. temperature [1] -50 -45 -40 -35 -30 -25 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25c +85c -40c frequency (ghz) isolation (db)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 3 psat vs. temperature hmc667lp2 / 667lp2e v02.1110 gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz output ip3 and idd vs. supply voltage @ 2300 mhz [1] measurement reference plane shown on evaluation pcb drawing. output ip3 vs. temperature noise figure vs. temperature [1] output ip3 and idd vs. supply voltage @ 2500 mhz 16 18 20 22 24 26 28 30 32 34 36 16 22 28 34 40 46 52 58 64 70 76 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (db) idd (ma) voltage supply (v) 16 18 20 22 24 26 28 30 32 34 36 16 22 28 34 40 46 52 58 64 70 76 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (db) idd (ma) voltage supply (v) 16 18 20 22 24 26 28 30 32 34 36 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25c +85c -40c frequency (ghz) ip3 (dbm) vdd=5v vdd=3v 6 8 10 12 14 16 18 20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 +25c +85c -40c frequency (ghz) psat (dbm) vdd=5v vdd=3v 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 vdd=5v vdd=3v frequency (ghz) noise figure (db) +85c +25c -40c
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 4 output power, gain & pae @ 2500 mhz [1] hmc667lp2 / 667lp2e v02.1110 gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz output power, gain & pae @ 2500 mhz [2] output power, gain & pae @ 2300 mhz [1] output power, gain & pae @ 2300 mhz [2] [1] vdd = 5v [2] vdd = 3v -10 -5 0 5 10 15 20 25 -25 -20 -15 -10 -5 0 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -10 -5 0 5 10 15 20 25 -25 -20 -15 -10 -5 0 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -10 -5 0 5 10 15 20 25 -25 -20 -15 -10 -5 0 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) -10 -5 0 5 10 15 20 25 -25 -20 -15 -10 -5 0 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) p1db, gain, & noise figure vs. supply voltage @ 2300 mhz p1db, gain, & noise figure vs. supply voltage @ 2500 mhz 8 10 12 14 16 18 20 22 24 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v) 8 10 12 14 16 18 20 22 24 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 p1db gain nf gain (db) & p1db (dbm) noise figure (db) voltage supply (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 5 absolute maximum ratings drain bias voltage (vdd) +6 vdc rf input power (rfin) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 5.88 mw/c above 85 c) 0.38 w thermal resistance (channel to ground paddle) 170 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c electrostatic sensitive device observe handling precautions hmc667lp2 / 667lp2e v02.1110 gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz noise figure vs. vdd w/ sdars tune [2] 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2.25 2.3 2.35 2.4 2.45 vdd=5v vdd=3v frequency (ghz) noise figure (db) gain & return loss w/ sdars tune [1] -25 -20 -15 -10 -5 0 5 10 15 20 25 2.25 2.3 2.35 2.4 2.45 s11 s22 s21 frequency ( ghz ) response (db) [1] vdd = 5v [2] measurement reference plane shown on evaluation pcb drawing.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 6 outline drawing hmc667lp2 / 667lp2e v02.1110 gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz part number package body material lead finish msl rating package marking [3] hmc667lp2 low stress injection molded plastic sn/pb solder msl1 [1] 667 xxx HMC667LP2E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 667 xxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 3-digit lot number xxx package information notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative. 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 7 pin number function description interface schematic 1, 2, 5 gnd these pins and package bottom must be connected to rf/dc ground. 3 rfin this pin is dc coupled see the application circuit for off-chip components 4 rfout this pin is ac coupled and matched to 50 ohms. 6 vdd power supply voltage. bypass capacitors are required. see application circuit. pin descriptions components for selected band hmc667lp2 / 667lp2e v02.1110 gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz components c1 l1 evaluation pcb number broadband 2.7 pf 2.0 nh 121891 sdars 2.2 pf 4.3 nh 122404
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 8 evaluation pcb item description j1 - j2 pcb mount sma connector j3 - j4 dc pin c1 2.7 pf capacitor, 0402 pkg. c2 1000 pf capacitor, 0402 pkg. c3 10 nf capacitor, 0603 pkg. c4 2.2 f capacitor, case-a tantalum l1 2 nh inductor, 0402 pkg. u1 hmc667lp2(e) ampli er pcb [2] 117163 evaluation pcb [1] when requesting an evaluation board, please reference the appropriate evaluation pcb number listed in the table components for selected band on previous page [2] circuit board material: rogers 4350 list of materials for evaluation pcb [1] the circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro- priate heat sink. the evaluation circuit board shown is available from hittite upon request. hmc667lp2 / 667lp2e v02.1110 gaas phemt mmic low noise amplifier, 2.3 - 2.7 ghz
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